2015-Sustainable Industrial Processing Summit
SIPS 2015 Volume 9: Physics, Advanced Materials, Multifunctional Materials

Editors:Kongoli F, Dubois JM, Gaudry E, Fournee V, Marquis F
Publisher:Flogen Star OUTREACH
Publication Year:2015
Pages:275 pages
ISSN:2291-1227 (Metals and Materials Processing in a Clean Environment Series)
< CD shopping page

    Internal Friction Spectra and Microhardness of Non-Doped Monocrystalline Si1-XGex (X<0,02) Substrates

    Ia Kurashvili1; Avtandil Sichinava1; Guram Bokuchava1; Giorgi Darsavelidze1;
    1, Tbilisi, Georgia;
    Type of Paper: Regular
    Id Paper: 320
    Topic: 21


    Monocrystalline Si-Ge alloys are characterized by the improved electrophysical characteristics, radiation resistance and fracture strength. These circumstances stipulate high perspectives for their photovoltaic and optoelectronic applications. An investigation of structural-sensitive mechanical properties of monocrystalline Si-Ge substrates with various Ge concentration is important for the solution of deliberate control of their structural and physical characteristics.
    The present work deals with the investigation of internal friction and shear modulus temperature spectra and microhardness of non-doped monocrystalline Si1-xGex(x<0,02) substrates. Samples surfaces with (111) crystallographic orientation have been prepared by standard mechanical and chemical polishing methods. Decrease of activation energy of relaxation processes and nonmonotonic changes of shear modulus have been revealed in 0,5-5,0Hz oscillation frequency and 20-750 C temperature ranges. Investigation of microhardness and elastic modulus by Vickers indentation method were performed on Shimadzu device. It is shown that with increasing concentration of germanium microhardness the elasticity modulus decreases. Observed changes are discussed from the point of view of interaction of various dislocations with point defects and their complexes in a real structure of Si-Ge substrates.


    Materials; Photovoltaics;


    [1] C.A. Londos, A.Andrianakis, V.V.Emtsev, G.A. Oganesyan, H.Ohyama. The effects of germanium doping on the evolution of defects in silicon. Materails Scienec and Engineering B , 154-155 (2008), 133-136.
    [2] D.Yang, J.Chen, H.Li, X.Ma, D.Tian, L.Li, D.Que. “Micro-defects in Ge doped Czochralski grown Si crystals”.J.Crystal Growth 292 (2006) ,266-271
    [3] P.Wang, X.Yu, Z.Li, D.Yang, “Improved fracture strength of multicrystalline silicon by germanium doping”. J. Crystal Growth 318 (2011) ,230-233.
    [4] D.Yang, P.Wang, X.Yu, D.Que. “Germanium –doped crystalline silicon: A new substrate for photovoltaic application” J. Crystal Growth 362 (2013)140-144.
    [5] I.Yonenaga. Growth and mechanical properties of GeSi bulk crystals. J. Materials Science: Materials in Electronics 10 (1999) 329-333
    [6] I. Kurashvili, E. Sanaia, G. Darsavelidze, G. Bokuchava, A. Sichinava, I. Tabatadze, V. Kuchukhidze. ”Physical-mechanical properties of germanium doped monocrystalline silicon”. J. Materials Science and Engineering.A3 11 (2013) 698-703.
    [7] B.Roos, H.Richter, J.Wollweber. “Composition dependence of hardness and elastic modulus in Si-Ge measured by nanoindentation –possible consequences for elasto-plastic relaxation and diffusion”. Solid State Phenomena. 47-48 (1996) 509-511.
    [8] M. Blanter, I. Golovin, H. Neuhauser, H. Sining, Internal friction in metallic materials, A handbook Series: Springer Series in materials Science 90 ( 2007) 539.
    [9] A. Pushkar. Internal friction in metals and alloys. London (2005) 640.

    Full Text:

    Click here to access the Full Text

    Cite this article as:

    Kurashvili I, Sichinava A, Bokuchava G, Darsavelidze G. Internal Friction Spectra and Microhardness of Non-Doped Monocrystalline Si1-XGex (X<0,02) Substrates. In: Kongoli F, Dubois JM, Gaudry E, Fournee V, Marquis F, editors. Sustainable Industrial Processing Summit SIPS 2015 Volume 9: Physics, Advanced Materials, Multifunctional Materials. Volume 9. Montreal(Canada): FLOGEN Star Outreach. 2015. p. 133-140.