2015-Sustainable Industrial Processing Summit
SIPS 2015 Volume 9: Physics, Advanced Materials, Multifunctional Materials

Editors:Kongoli F, Dubois JM, Gaudry E, Fournee V, Marquis F
Publisher:Flogen Star OUTREACH
Publication Year:2015
Pages:275 pages
ISBN:978-1-987820-32-4
ISSN:2291-1227 (Metals and Materials Processing in a Clean Environment Series)
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    Reactive Diffusion for Contact Formation in Advanced MOS Devices

    Dominique Mangelinck1; Khalid Hoummada2; Mike El Kousseifi2; Federico Panciera2; Marion Descoins2; Maxime Bertoglio2; Thierry Epicier3; Magali Gregoire4;
    1IM2NP-CNRS-AMU, Marseille cedex 20, France; 2IM2NP-CNRS-AMU, Marseille, France; 3MATEIS, UMR 5510, Villeurbanne, France; 4STMICROLECTRONICS, Crolles, France;
    Type of Paper: Invited
    Id Paper: 334
    Topic: 20

    Abstract:

    Metallic silicides are used as contact materials on source/drain and gate in MOS structure since the 1970's. From the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilise NiSi at high temperature. The presence of Pt and the very low thickness (< 10 nm) needed for the contact in the devices bring new concerns for actual devices. Indeed, for such film thicknesses, phenomena like nucleation, lateral growth, interfacial reaction, stress, texture and transient phase formation can play an important role. The presence of alloy elements (Pt, Pd) as well as stress and defects induced by the confinement in devices have some effects on the silicide formation mechanism and on the alloying element redistribution. In this work, in situ techniques (XRD, sheet resistance, DSC) were combined with atom probe tomography (APT) and transmission electron microscopy (TEM) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd) during the silicide formation. In particular, APT has been used for the local analysis of MOSFET in 3D and at the atomic scale [3]. The advances in the understanding of the mechanisms of formation and redistribution will be discussed.

    Keywords:

    Alloys; Atomic; Characterization; Chemistry; Coatings; Experiments; Formation; Interfaces; Models; Nano-Objects; Stability;

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    Cite this article as:

    Mangelinck D, Hoummada K, El Kousseifi M, Panciera F, Descoins M, Bertoglio M, Epicier T, Gregoire M. Reactive Diffusion for Contact Formation in Advanced MOS Devices. In: Kongoli F, Dubois JM, Gaudry E, Fournee V, Marquis F, editors. Sustainable Industrial Processing Summit SIPS 2015 Volume 9: Physics, Advanced Materials, Multifunctional Materials. Volume 9. Montreal(Canada): FLOGEN Star Outreach. 2015. p. 79-80.