2017-Sustainable Industrial Processing Summit
SIPS 2017 Volume 5. Marquis Intl. Symp. / New and Advanced Materials and Technologies
| Editors: | Kongoli F, Marquis F, Chikhradze N |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2017 |
| Pages: | 590 pages |
| ISBN: | 978-1-987820-69-0 |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
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Electron/Hole Transformation between Two Atomic Layers
Junrong Zheng1;1PEKING UNIVERSITY, Beijing, China;
Type of Paper: Keynote
Id Paper: 195
Topic: 43
Abstract:
Electron/hole transformations on interfaces determine fundamental properties of opto-electro-chemical devices, but remain a grand challenge to experimentally investigate and theoretically describe. Herein combining ultrafast VIS/NIR/MIR frequency-mixed microspectroscopy and state-of-the-art two-dimensional atomic device fabrications, we are able to directly monitor the phase transitions of charged quasiparticles in real time on the ultimate interfaces – between two atomic layers.
On type II semiconductor/semiconductor interfaces between two transition metal dichalcogenide (TMDC) monolayers, interfacial charge transfers occur within 50fs and interlayer hot excitons (unbound interlayer e/h pairs) are the necessary intermediate of the process for both energy and momentum conservations.
On semiconductor/conductor (graphene) interfaces, interlayer charge transfers result in an unexpected transformation of conducting free carriers into insulating interlayer excitons between the conducting graphene and the semiconducting TMDC. The formation of interlayer excitons significantly improves the charge separation efficiency between the two atomic layers for more than twenty times.