ORAL

SESSION: SISAMTueAM-R9	3rd Intl. Symp. Surfaces and Interfaces of Sustainable, Advanced Materials (SISAM)
Tue Oct, 24 2017	Room: Condesa III
Session Chairs: Daniel Kropman; Brice Gautier; Session Monitor: TBA

11:30: [SISAMTueAM02]
Stresses Relaxation in the Si-SiO2 System and its Influence on the Interface Properties
Daniel Kropman¹ ; Viktor Seeman² ; Artur Medvids³ ; Janis Kliava⁴ ; ¹Tallinn University, Tallinn, Estonia; ²Tartu University, Tartu, Estonia; ³Riga Technikal University, Riga, Latvia; ⁴, , ;
Paper Id: 221 [Abstract]

This paper presents the results of the investigation of stresses relaxation by strain, by means of EPR spectra, SEM, and samples deflection. It has been shown that stresses relaxation mechanism depends on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system, the stresses relaxation occurs due to the opposite sign of the thermal expansion coefficient of SiO2 and Si3N4 on Si. With an appropriate oxidation condition choice, compressive stresses in SiO2 and tensile stresses in Si are nearly equal and disappear on the interface.