2018 - Sustainable Industrial Processing Summit & Exhibition
4-7 November 2018, Rio Othon Palace, Rio De Janeiro, Brazil
Seven Nobel Laureates have already confirmed their attendance: Prof. Dan Shechtman, Prof. Sir Fraser Stoddart, Prof. Andre Geim, Prof. Thomas Steitz, Prof. Ada Yonath, Prof. Kurt Wüthrich and Prof. Ferid Murad. More than 400 Abstracts Submitted from about 60 Countries.
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    Synthesis of ZnSe Films by Electrochemical Deposition for Assembly of Photo-transforming Heterostructures
    Dmitri S. Sofronov1; Athanasios G. Mamalis2; Vadym V. Starikov3; E.m. Sofronova1; E.a. Vaksler1; P.v. Mateychenko1; Sergiy N. Lavrynenko4;
    1SSI "INSTITUTE FOR SINGLE CRYSTALS" OF NAS OF UKRAINE, Kharkiv, Ukraine; 2PC-NAE, DEMOKRITOS NATIONAL CENTER FOR SCIENTIFIC RESEARCH, Athens, Greece; 3NATIONAL TECHNICAL UNIVERSITY - KHARKOV POLYTECHNIC INSTITUTE, Kharkiv, Ukraine; 4KHARKOV POLYTECHNIC INSTITUTE, Kharkov, Ukraine;
    PAPER: 170/Manufacturing/Regular (Oral)
    SCHEDULED: 17:40/Mon./Sao Conrado (50/2nd)



    ABSTRACT:
    The zinc selenide films were synthesized using an electrochemical method in alkaline electrolyte. The influence of deposition options (zinc ions concentration, cathodic current density and electrolysis duration) on ZnSe films formation is discussed. It is shown that the increase of film thickness and its porosity is observed at increase of current density and zinc ions concentration in electrolyte. The most compact films are formed when the zinc concentration in the electrolyte is less than 0.05 M and the current density is not higher than 35 mA/cm<sup>2</sup>. The obtained ZnSe film had p-type conductivity and a resistivity of 10<sup>5</sup>-10<sup>6</sup> Ohm·m. It was synthesized heterostructure ZnS/ZnSe/Ni including the p-n transition. The parameters of the diode heterostructure were determined by the dark IV-characteristic.